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2SK3635 - MOSFET

Features

  • High voltage: VDSS = 200 V Gate voltage rating: 30 V +0.15 5.55-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm Low on-state resistance +0.1 0.80-0.1 Low Ciss: Ciss = 390 pF TYP. Built-in gate protection diode 2.3 +0.15 4.60-0.15 +0.15 0.50-0.15 RDS(on) = 0.43 MAX. (VGS = 10 V, ID = 4.0 A) +0.2 9.70-0.2 0.127 max +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to sour.

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Datasheet Details

Part number 2SK3635
Manufacturer Guangdong Kexin Industrial
File Size 75.19 KB
Description MOSFET
Datasheet download datasheet 2SK3635 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SMD Type www.DataSheet4U.com IC MOSFET MOS Field Effect Transistor 2SK3635 Features High voltage: VDSS = 200 V Gate voltage rating: 30 V +0.15 5.55-0.15 +0.15 6.50-0.15 +0.2 5.30-0.2 TO-252 +0.15 1.50-0.15 +0.1 2.30-0.1 +0.8 0.50-0.7 Unit: mm Low on-state resistance +0.1 0.80-0.1 Low Ciss: Ciss = 390 pF TYP. Built-in gate protection diode 2.3 +0.15 4.60-0.15 +0.15 0.50-0.15 RDS(on) = 0.43 MAX. (VGS = 10 V, ID = 4.0 A) +0.2 9.70-0.2 0.127 max +0.1 0.60-0.1 +0.28 1.50-0.1 +0.25 2.65-0.1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current Power dissipation TC=25 TA=25 Channel temperature Storage temperature * PW 10 s,Duty Cycle 1% Tch Tstg Symbol VDSS VGSS ID Idp * PD Rating 200 30 8.0 24 24 1.
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